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1. Effect of compaction on the surface morphology of CuInSe2 thin films SCOPUS CPCI-S 期刊论文 会议论文 认领

作者:Yuan, XJ;Wang, YL;Xu, JG

作者全称:Yuan, Xiaojun;Wang, Yanlai;Xu, Jingang

作者机构:[Yuan, Xiaojun; Wang, Yanlai; Xu, Jingang] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Univ Inner Mo, Hohhot 0100 更多

第一作者:Yuan, Xiaojun

通讯作者:Yuan, XJ

通讯作者地址:Yuan, XJ (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Univ Inner Mo, Hohhot 010021, Peoples R China.

来源:APPLIED MECHANICS AND MATERIALS I, PTS 1-3,2013,Vol.275-277

关键词:CuInSe2 thin films; surface morphology; compaction

摘要:The CuInSe2 compound was prepared by paste coating and electrodeposition-selenization. Observed by scanning electron microscopy (SEM), the surface mor 更多

2. Fabrication of high-quality CuInSe2 films by coating, compaction and selenization SCOPUS CPCI-S 期刊论文 会议论文 认领

作者:Xu, JG;Wang, YL;Nie, HB

作者全称:Xu, Jingang;Wang, Yanlai;Nie, Hongbo

作者机构:[Xu, Jingang; Wang, Yanlai] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Sch Phys Sci & Technol, Hohh 更多

第一作者:Xu, Jingang

通讯作者:Xu, JG

通讯作者地址:Xu, JG (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:RESEARCH ON MECHANICS, DYNAMIC SYSTEMS AND MATERIAL ENGINEERING,2013,Vol.625

基金:Wuhan institute of technology;Beijing Material Research Center;International Material Research Society, Hong Kong

关键词:CuInSe2; coating; compaction; selenization

摘要:CuInSe2 thin films were successfully prepared by selenization of precursor films coated on the Mo foils. The precursor films were compacted to improve 更多

3. Preparation and optical properties of CuInS2 thin films SCOPUS 期刊论文 认领

作者:Xie J.-Y.;Li J.;Wang Y.-L.

作者机构:[Xie, J.-Y] School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China;[ Li, J] School of Physical Science and Technol 更多

第一作者:Xie J.-Y.

通讯作者:Xie, J.-Y

通讯作者地址:Xie, J.-Y.; School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China

来源:Gongneng Cailiao/Journal of Functional Materials,2011,Vol.42,Issue.SUPPL. 1

SCOPUS被引频次:1

摘要:Vacuum co-evaporation method was utilized to obtain CuInS2 thin films on glass substrates. The effects of different Cu-In-S mixed ratios and heat-trea 更多

4. Preparation of CuInSe2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology SCIE SCOPUS 期刊论文 认领

作者:Wang, YL;Nie, HB;Guo, SJ

作者全称:Wang Yanlai;Nie Hongbo;Guo Shiju

作者机构:[Wang Yanlai] Inner Mongolia Univ, Sch Phys Sci & Technol, Univ Inner Mongolia Autonomous Reg, Key Lab Semicond Photovolta Technol, Hohhot 010021, Peo 更多

第一署名单位:[Wang Yanlai] Inner Mongolia Univ, Sch Phys Sci & Technol, Univ Inner Mongolia Autonomous Reg, Key Lab Semicond Photovolta Technol, Hohhot 010021, Peoples R China.

第一作者:Wang Yanlai

通讯作者:Wang, YL

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Univ Inner Mongolia Autonomous Reg, Key Lab Semicond Photovolta Technol, Hohhot 010021, Peoples R China.

来源:RARE METALS,2010,Vol.29,Issue.5

基金:Inner Mongolia University [Z20090144, Z20090120]

JCR分区:MATERIALS SCIENCE, MULTIDISCIPLINARY为Q3;METALLURGY & METALLURGICAL ENGINEERING为Q2

中科院分区:大类工程技术4区;小类材料科学:综合4区;小类冶金工程4区

(JCR)当年影响因子:1.5

(JCR)5年影响因子:1.217

WOS被引频次:3

SCOPUS被引频次:3

ESI学科:MATERIALS SCIENCE

教育部学科:冶金工程,材料科学与工程

关键词:photovoltaic cells; CuInSe2; thin films; electrodeposition;; selenization; compaction

摘要:The CuInSe2 compound was prepared by selenization of Cu-In precursor, which was ultrasonic electrodeposited at constant current. CuInSe2 films were co 更多

5. Oxygen vacancy of RE0.5Sr0.5CoO3-delta Thin films SCOPUS CPCI-S 期刊论文 会议论文 认领

作者:Ding, TZ;Zhu, CJ;Qin, YL;Wang, YL;Chao, LM

作者全称:Ding, Tiezhu;Zhu, Chengjun;Qin, Yanli;Wang, Yanlai;Chao, Luomeng

作者机构:[Ding, Tiezhu; Zhu, Chengjun; Qin, Yanli; Wang, Yanlai; Chao, Luomeng] Inner Mongolia Univ, Sch Phys Sci & Technol, Inner Mongolia Key Lab Semicond Ph 更多

第一作者:Ding, Tiezhu

通讯作者:Ding, TZ

通讯作者地址:Ding, TZ (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Inner Mongolia Key Lab Semicond Photovolta Techno, Hohhot 010021, Peoples R China.

来源:RENEWABLE AND SUSTAINABLE ENERGY II, PTS 1-4,2012,Vol.512-515

关键词:Oxygen vacancy; Thin films; Solid oxide fuel cell

摘要:Thin films of RE0.5Sr0.5CoO3-delta (RE=La, Pr, Nd) nominal composition were grown on yttria-stabilized zirconia (YSZ) single crystal substrates by ion 更多

6. Analyse of Indium loss in preparation of CuInSe2 Films for solar cells SCOPUS CPCI-S 期刊论文 会议论文 认领

作者:Sha, L;Wang, YL;Ban, SL

作者全称:Sha Lai;Wang Yanlai;Ban Shiliang

作者机构:[Sha Lai; Wang Yanlai; Ban Shiliang] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Sch Phys Sci & Tech 更多

第一作者:Sha Lai

通讯作者:Sha, L

通讯作者地址:Sha, L (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:ENVIRONMENTAL BIOTECHNOLOGY AND MATERIALS ENGINEERING, PTS 1-3,2011,Vol.183-185

基金:Harbin University of Commerce;Heilongjiang Province Institute of Food Science and Technology

关键词:Cu-In precursor films; ultrasonic electrodeposition; selenization;; indium loss; In2Se

摘要:CuInSe2 thin films were obtained by selenization of the Cu-In precursors in the atmosphere of Se vapour, which were prepared on stainless steel and ti 更多

7. Effect of Heat Treatment on the Crystal Structure and Optical Band Gap of Cigs Thin Films SCOPUS CPCI-S 期刊论文 会议论文 认领

作者:Han, L;Ding, TZ;Wang, YL;Chao, LM;Shang, T

作者全称:Han, Lei;Ding, Tiezhu;Wang, YanLai;Chao, LuoMeng;Shang, Tao

作者机构:[Han, Lei; Ding, Tiezhu; Wang, YanLai; Chao, LuoMeng; Shang, Tao] Inner Mongolia Univ, Sch Phys Sci & Technol, Inner Mongolia Key Lab Semicond Photovo 更多

第一作者:Han, Lei

通讯作者:Han, L

通讯作者地址:Han, L (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Inner Mongolia Key Lab Semicond Photovolta Techno, Hohhot 010021, Peoples R China.

来源:RENEWABLE AND SUSTAINABLE ENERGY, PTS 1-7,2012,Vol.347-353

关键词:PLD; CIGS thin film; heat treatment

摘要:The CIGS thin films were prepared on ordinary soda lime glass substrates by pulsed laser deposition (PLD). The XRD and UV-visible spectrophotometer ha 更多

8. Preparation and Properties of CdS Thin Films Deposited by Chemical Bath Deposition SCOPUS CPCI-S 期刊论文 会议论文 认领

作者:Li, HY;Wang, YL;Ban, SL;Wang, YM

作者全称:Li Haiyi;Wang Yanlai;Ban Shiliang;Wang Yimin

作者机构:[Li Haiyi; Wang Yanlai; Ban Shiliang] Inner Mongolia Univ, Univ Inner Mongolia Autonomous Reg, Key Lab Semicond Photovolta Technol, Sch Phys Sci & Tec 更多

第一作者:Li Haiyi

通讯作者:Li, HY

通讯作者地址:Li, HY (reprint author), Inner Mongolia Univ, Univ Inner Mongolia Autonomous Reg, Key Lab Semicond Photovolta Technol, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:MECHANICAL AND AEROSPACE ENGINEERING, PTS 1-7,2012,Vol.110-116

基金:Program of Higher-level talents of Inner Mongolia University [Z20090144,; Z20090120]

关键词:CdS thin films; Chemical Bath Deposition; composition; surface; morphology

摘要:CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS(NH2)(2). The composition, 更多

9. Effects of Ti-doping on CuGaS2 thin films by co-sputtering and sulfurizing SCIE SCOPUS 期刊论文 认领

作者:Jing, W;Wang, YL;Zhu, J;Yao, W;Song, ST

作者全称:Jing, Wei;Wang, Yanlai;Zhu, Jun;Yao, Wei;Song, Shuting

作者机构:[Jing, Wei; Wang, Yanlai; Zhu, Jun; Yao, Wei; Song, Shuting] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mo 更多

第一署名单位:[Jing, Wei; Wang, Yanlai; Zhu, Jun; Yao, Wei; Song, Shuting] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongoli, Hohhot 010021, Peoples R China.

第一作者:Jing, Wei

通讯作者:Wang, YL

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongoli, 235 West Daxue St, Hohhot 010021, Peoples R China.

来源:MATERIALS LETTERS,2016,Vol.164

基金:National Natural Science Foundation of China [51364025]

JCR分区:PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2

中科院分区:大类工程技术2区;小类材料科学:综合3区;小类物理:应用3区

(JCR)当年影响因子:2.687

(JCR)5年影响因子:2.452

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程,材料科学与工程,力学,机械工程

关键词:Ti doped CuGaS2 thin films; Magnetron co-sputtering; Optical band gap

摘要:Titanium has been incorporated into the copper gallium disulfide (CuGaS2) thin film by sulfurizing Cu-Ga-Ti precursor, which has been obtained through 更多

10. Influence of Ce doping on structural and photoelectric properties of CuInS2 thin films SCIE SCOPUS 期刊论文 认领

作者:Zhu, J;Xiao, LL;Ding, TZ;Wang, YL;Fan, Y

作者全称:Zhu, Jun;Xiao, Lingling;Ding, Tiezhu;Wang, Yanlai;Fan, Yue

作者机构:[Zhu, Jun; Xiao, Lingling; Ding, Tiezhu; Wang, Yanlai; Fan, Yue] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Univ 更多

第一署名单位:[Zhu, Jun; Xiao, Lingling; Ding, Tiezhu; Wang, Yanlai; Fan, Yue] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Univ Inner Mo, Hohhot 010021, Peoples R China.

第一作者:Zhu, Jun

通讯作者:Zhu, J

通讯作者地址:Zhu, J (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Univ Inner Mo, Hohhot 010021, Peoples R China.

来源:JOURNAL OF APPLIED PHYSICS,2015,Vol.118,Issue.11

基金:National Natural Science Foundation of China [61464009]; Major; Fundamental Research Program of Inner Mongolia Autonomous Region; [20130902]

JCR分区:PHYSICS, APPLIED为Q2

中科院分区:大类物理3区;小类物理:应用3区

(JCR)当年影响因子:2.176

(JCR)5年影响因子:2.163

WOS被引频次:2

ESI学科:PHYSICS

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程

摘要:Cerium doped CuInS2 thin films were successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurem 更多

11. Characterization and preparation of Sn-doped CuGaS2 thin films by paste coating SCIE SCOPUS 期刊论文 认领

作者:Song, ST;Wang, YL;Yuan, XJ;Yao, W;Jing, W

作者全称:Song, Shuting;Wang, Yanlai;Yuan, Xiaojun;Yao, Wei;Jing, Wei

作者机构:[Song, Shuting; Wang, Yanlai; Yuan, Xiaojun; Yao, Wei; Jing, Wei] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inn 更多

第一署名单位:[Song, Shuting; Wang, Yanlai; Yuan, Xiaojun; Yao, Wei; Jing, Wei] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongoli, Hohhot 010021, Peoples R China.

第一作者:Song, Shuting

通讯作者:Wang, YL

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongoli, 235 West Daxue St, Hohhot 010021, Peoples R China.

来源:MATERIALS LETTERS,2015,Vol.148

基金:National Natural Science Foundation of China [51364025]; Natural Science; Foundation of Inner Mongolia Autonomous Region of China [2010BS0105]

JCR分区:PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2

中科院分区:大类工程技术2区;小类材料科学:综合3区;小类物理:应用3区

(JCR)当年影响因子:2.687

(JCR)5年影响因子:2.452

WOS被引频次:2

SCOPUS被引频次:2

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程,材料科学与工程,力学,机械工程

关键词:Sn-doped CuGaS2 thin films; Ball milling; Band gaps

摘要:The Sn-doped CuGaS2 thin films were fabricated by paste coating and annealing. The paste was prepared by ball milling the mixture of Cu2S, Ga2S3 and C 更多

12. Characterization and preparation of Cu2ZnSnS4 thin films by ball-milling, coating and sintering SCIE SCOPUS 期刊论文 认领

作者:Yao, W;Wang, YL;Wang, LG;Wang, XJ;Zhang, ZF

作者全称:Yao, Wei;Wang, Yanlai;Wang, Ligang;Wang, Xiaojing;Zhang, Zhifang

作者机构:[Yao, Wei; Wang, Yanlai; Zhang, Zhifang] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, Hohhot 010021 更多

第一署名单位:[Yao, Wei; Wang, Yanlai; Zhang, Zhifang] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Yao, Wei

通讯作者:Wang, YL

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, 235 West Daxue St, Hohhot 010021, Peoples R China.

来源:MATERIALS LETTERS,2014,Vol.134

基金:National Natural Science Foundation of China [51364025]

JCR分区:PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2

中科院分区:大类工程技术2区;小类材料科学:综合3区;小类物理:应用3区

(JCR)当年影响因子:2.687

(JCR)5年影响因子:2.452

WOS被引频次:1

SCOPUS被引频次:1

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程,材料科学与工程,力学,机械工程

关键词:CZTS; Ball milling; Coating; Sintering; Optical band gap

摘要:Cu2ZnSnS4 (CZTS) thin films were prepared by ball-milling, coating and sintering. Structural, morphological, compositional, and optical properties of 更多

13. Preparation and characterization of CuGaS2 thin films as a promising parent material for intermediate band solar cells SCIE SCOPUS 期刊论文 认领

作者:Wang, LG;Yuan, XJ;Wang, YL;Yao, W;Zhu, J;Jing, W

作者全称:Wang, Ligang;Yuan, Xiaojun;Wang, Yanlai;Yao, Wei;Zhu, Jun;Jing, Wei

作者机构:[Wang, Ligang; Yuan, Xiaojun; Wang, Yanlai; Yao, Wei; Zhu, Jun; Jing, Wei] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch 更多

第一署名单位:[Wang, Ligang; Yuan, Xiaojun; Wang, Yanlai; Yao, Wei; Zhu, Jun; Jing, Wei] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Wang, Ligang

通讯作者:Wang, YL

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, 235 West Daxue St, Hohhot 010021, Peoples R China.

来源:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,Vol.30

基金:National Natural Science Foundation of China [51364025]; Major; Fundamental Research Program of Inner Mongolia Autonomous Region; [20130902]

JCR分区:PHYSICS, CONDENSED MATTER为Q2;PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2;ENGINEERING, ELECTRICAL & ELECTRONIC为Q2

中科院分区:大类工程技术3区;小类工程:电子与电气3区;小类材料科学:综合3区;小类物理:应用3区;小类物理:凝聚态物理3区

(JCR)当年影响因子:2.593

(JCR)5年影响因子:2.4

WOS被引频次:3

SCOPUS被引频次:2

ESI学科:MATERIALS SCIENCE

关键词:CuGaS2 thin films; Magnetron sputtering; Photoelectric properties

摘要:Copper gallium disulfide (CuGaS2, CGS) thin films were successfully prepared by sulfurizing Cu-Ga (CG) precursors in sulfur atmosphere which have been 更多

14. Effects of Zn, Zn-Al and Zn-P Additions on the Tensile Properties of Sn-Bi Solder SCIE SCOPUS 期刊论文 认领

作者:Wang, XJ;Wang, YL;Wang, F;Liu, N;Wang, JX

作者全称:Wang, Xiaojing;Wang, Yanlai;Wang, Feng;Liu, Ning;Wang, Jianxin

作者机构:[Wang, Xiaojing; Wang, Feng; Liu, Ning; Wang, Jianxin] Jiangsu Univ Sci & Technol, Sch Mat & Sci Engn, Zhenjiang 212003, Peoples R China.; [Wang, Ya 更多

第一作者:Wang, Xiaojing

通讯作者:Wang, XJ

通讯作者地址:Wang, XJ (reprint author), Jiangsu Univ Sci & Technol, Sch Mat & Sci Engn, Zhenjiang 212003, Peoples R China.

来源:ACTA METALLURGICA SINICA-ENGLISH LETTERS,2014,Vol.27,Issue.6

基金:Natural Science Fund for Colleges and Universities in Jiangsu Province; [11KJB460003, 12KJB460003]; Jiangsu Planning Project of Science and; Technology [SBK201241936]; National Natural Science Foundation of China; [51201072]

JCR分区:METALLURGY & METALLURGICAL ENGINEERING为Q2

中科院分区:大类工程技术4区;小类冶金工程4区

(JCR)当年影响因子:1.341

(JCR)5年影响因子:1.28

WOS被引频次:5

SCOPUS被引频次:5

ESI学科:MATERIALS SCIENCE

教育部学科:矿业工程,轻工技术与工程,冶金工程

关键词:Sn-Bi; Tensile test; Microstructure

摘要:Effects of Zn, Zn-Al and Zn-P additions on melting points, microstructures, tensile properties, and oxidation behaviors of Sn-40Bi lead-free solder we 更多

15. CuInS2 thin films obtained by solid-state sulfurization SCIE SCOPUS 期刊论文 认领

作者:Yao, W;Wang, YL;Wang, XJ;Zhu, J;Zhang, ZF;Yuan, XJ

作者全称:Yao, Wei;Wang, Yanlai;Wang, Xiaojing;Zhu, Jun;Zhang, Zhifang;Yuan, Xiaojun

作者机构:[Yao, Wei; Wang, Yanlai; Zhu, Jun; Zhang, Zhifang; Yuan, Xiaojun] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inn 更多

第一署名单位:[Yao, Wei; Wang, Yanlai; Zhu, Jun; Zhang, Zhifang; Yuan, Xiaojun] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongoli, Hohhot 010021, Peoples R China.

第一作者:Yao, Wei

通讯作者:Wang, YL

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongoli, 235 West Daxue St, Hohhot 010021, Peoples R China.

来源:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2014,Vol.26,Issue.1

基金:Natural Science Foundation of Inner Mongolia Autonomous Region of China; [2010BS0105]; National Natural Science Foundation of China [51364025]

JCR分区:PHYSICS, CONDENSED MATTER为Q2;PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2;ENGINEERING, ELECTRICAL & ELECTRONIC为Q2

中科院分区:大类工程技术3区;小类工程:电子与电气3区;小类材料科学:综合3区;小类物理:应用3区;小类物理:凝聚态物理3区

(JCR)当年影响因子:2.593

(JCR)5年影响因子:2.4

WOS被引频次:5

SCOPUS被引频次:4

ESI学科:MATERIALS SCIENCE

关键词:CuInS2 thin films; Magnetron sputtering; Sulfurization method;; Photoelectric properties

摘要:CuInS2 thin films were prepared by sulfurization of Cu-In precursor films through magnetron sputtering. The obtained films were characterized using X- 更多

16. Preparation of CuInS2 thin films by paste coating SCIE SCOPUS 期刊论文 认领

作者:Xu, JG;Wang, YL

作者全称:Xu, Jingang;Wang, Yanlai

作者机构:[Xu, Jingang; Wang, Yanlai] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, Hohhot 010021, Peoples R C 更多

第一署名单位:[Xu, Jingang; Wang, Yanlai] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Xu, Jingang

通讯作者:Wang, YL

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Inner Mongoli, Sch Phys Sci & Technol, 235 West Daxue St, Hohhot 010021, Peoples R China.

来源:MATERIALS LETTERS,2013,Vol.99

基金:Natural Science Foundation of Inner Mongolia Autonomous Region of China; [2010BS0105]; Program of Higher-Level Talents of Inner Mongolia; University [Z20090144, Z20090120]

JCR分区:PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2

中科院分区:大类工程技术2区;小类材料科学:综合3区;小类物理:应用3区

(JCR)当年影响因子:2.687

(JCR)5年影响因子:2.452

WOS被引频次:11

SCOPUS被引频次:11

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程,材料科学与工程,力学,机械工程

关键词:CuInS2 thin films; coating; Annealing; Optical properties

摘要:Precursor pastes were obtained by milling In2S3 and CuS. CuInS2 thin films were successfully prepared by precursor layers, which were coated on glasse 更多

17. Synthesis and characterization of Ce-incorporated CuInS2 chalcopyrites SCIE 期刊论文 认领

作者:Xiao, LL;Zhu, J;Ding, TZ;Wang, YL;Fan, Y;Bo, QR

作者全称:Xiao, Lingling;Zhu, Jun;Ding, Tiezhu;Wang, Yanlai;Fan, Yue;Bo, Qingrui

作者机构:[Xiao, Lingling; Zhu, Jun; Ding, Tiezhu; Wang, Yanlai; Fan, Yue; Bo, Qingrui] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Univ Inner Mo, 更多

第一署名单位:[Xiao, Lingling; Zhu, Jun; Ding, Tiezhu; Wang, Yanlai; Fan, Yue; Bo, Qingrui] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Univ Inner Mo, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Xiao, Lingling

通讯作者:Zhu, J

通讯作者地址:Zhu, J (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Univ Inner Mo, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:MATERIALS LETTERS,2015,Vol.159

基金:National Natural Science Foundation of China [61464009]; Major; Fundamental Research Program of Inner Mongolia Autonomous Region; [20130902]

JCR分区:PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2

中科院分区:大类工程技术2区;小类材料科学:综合3区;小类物理:应用3区

(JCR)当年影响因子:2.687

(JCR)5年影响因子:2.452

WOS被引频次:3

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程,材料科学与工程,力学,机械工程

摘要:CuInS2 thin films incorporating with cerium have been successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron m 更多

18. 硫化时间对CuInS\_2薄膜特性的影响 SCIE CSCD 北大核心刊 期刊论文 认领

作者:王利刚;王延来;姚伟;朱俊;徐金刚

外文作者:Wang, LG;Wang, YL;Yao, W;Zhu, J;Xu, JG

第一作者:王利刚

通讯作者:Wang, YL

作者机构:[王利刚;王延来;姚伟;朱俊;徐金刚]内蒙古大学半导体光伏技术自治区重点实验室,内蒙古呼和浩特

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:稀有金属材料与工程,2015,Vol.44,Issue.4

基金:National Natural Science Foundation of China [51364025]

JCR分区:MATERIALS SCIENCE, MULTIDISCIPLINARY为Q4;METALLURGY & METALLURGICAL ENGINEERING为Q4

ESI学科:MATERIALS SCIENCE

知网综合影响因子:0.480

知网复合影响因子:0.719

关键词:CuInS2薄膜;硫化时间;光电特性

摘要:磁控溅射制备Cu-In合金薄膜,随后通过固态源硫化制备了CuInS2。采用XRD、SEM、紫外可见光分光光度计和霍尔效应测试仪分析了薄膜的特性。结果表明:硫化时间为10mi 更多

19. 硒化Cu,In双层膜制备CuInSe2薄膜 CSCD 北大核心刊 期刊论文 认领

作者:王延来;果世驹

外文作者:Wang Yanlait;Guo Shiju;Wang Yanlai[1];Guo Shiju[2]

第一作者:王延来

作者机构:[王延来]内蒙古大学物理科学与技术学院、内蒙古自治区高等学校半导体光伏技术重点实验室,呼和浩特;[果世驹]北京科技大学粉末冶金研究所,北京 更多

来源:太阳能学报,2011,Vol.32,Issue.7

基金:内蒙古大学高层次人才引进科研启动项目(7220090144;Z20090120)

CSCD被引频次:1

知网综合影响因子:0.347

知网复合影响因子:0.542

关键词:CuInSe2薄膜;超声波电沉积;硒化

摘要:采用超声波电沉积方法在钼衬底上制备了cu,In双层膜,随后硒化得到了CulnSe2薄膜。采用扫描电镜(SEM)、能谱仪(EDS)和X射线衍射仪(XRD)研究了薄膜的表面形貌 更多

20. CuInS2薄膜的制备及光学特性 期刊论文 认领 增刊

作者:谢俊叶;李健;王延来

外文作者:XIE Jun-ye[1];LI Jian[2];WANG Yan-lai[2]

第一作者:谢俊叶

作者机构:[谢俊叶;李健;王延来]内蒙古大学物理科学与技术学院,内蒙古呼和浩特;[李健;王延来]内蒙古自治区高等学校半导体光伏技术重点实验室,内蒙古呼和浩特;[谢俊叶]内蒙古 更多

来源:功能材料,2011,Issue.B02;z1

基金:内蒙古自治区自然科学基金资助项目(2009MS0109);内蒙古大学‘211工程’创新人才研究生培养资助项目(2-2.2.1);内蒙古大学高层次人才引进项目科研启动资助项目(Z20090144);内蒙古自治区自然科学基金资助项目,内蒙古大学'211工程'创新人才研究生培养资助项目,内蒙古大学高层次人才引进项目科研启动资助项目

知网综合影响因子:0.604

知网复合影响因子:0.922

关键词:真空共蒸发;CulnS2薄膜;热处理;光学特性;真空共蒸发;CuInS2薄膜;热处理;光学特性;

摘要:真空共蒸发在玻璃衬底上制备CuInS2薄膜。研究不同Cu、In、S元素配比、不同热处理条件对薄膜的结构、化学计量比及光学性能的影响.实验结果给出:在元素配比中S的 更多

更新时间:Mar 28, 2019

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