全部成果分类

按条件检索“233”条记录

已选条件:
导出
  • 排序
  • 显示
1. Fabrication of a Ti-substituted CuGaS2 intermediate band material by alternate sputtering SCOPUS 期刊论文

作者:Fan W.-L.;Yao H.-Y.;Wang Y.-L.;Ban S.-L.

作者全称:Fan, Wen-Liang;Yao, Hai-Yan;Wang, Yan-Lai;Ban, Shi-Liang

作者机构:[Wang, Yan-Lai;Ban, Shi-Liang] Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, School of 更多

通讯作者:Wang, Yan-Lai(tsting2006@163.com)

通讯作者地址:Wang, Y.-L.; Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia UniversityChina; 电子邮件: tsting2006@163.com

来源:Materials Letters,2019,Vol.236

基金:Number; Sponsor 2018MS01018; Natural Science Foundation of Inner Mongolia - Number; Acronym; Sponsor 61464009; NSFC; National Natural Science Foundation of China - Number; Acronym; Sponsor 61864009; NSFC; National Natural Science Foundation of China - Number; Acronym; Sponsor NJYT-17-B13; NMG; Inner Mongolia Autonomous Region - Number; Acronym; Sponsor NJZZ18002; NMG; Inner Mongolia Autonomous Region

摘要:Ti-substituted CuGaS2 (Ti-CGS) thin film, a well candidate intermediate band (IB) material, has been successfully synthesized via a well synthetic rou 更多

2. Characterization of CuGa1-xTixS2 thin films synthesized by a facile non vacuum method EI SCIE SCOPUS 期刊论文

作者:Fan, WL;Wang, YL;Zhu, J;Jing, W;Ban, SL

作者全称:Fan, Wen-Liang;Wang, Yan-Lai;Zhu, Jun;Jing, Wei;Ban, Shi-Liang

作者机构:[Fan, Wen-Liang; Wang, Yan-Lai; Zhu, Jun; Jing, Wei; Ban, Shi-Liang] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol 更多

第一署名单位:[Fan, W.-L] Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, Hohhot, China, Ordos Institute of Technology, Ordos, China

第一作者:Fan, Wen-Liang

通讯作者:Wang, Yan-Lai(tsting2017@163.com)

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Univ Inner Mo, Hohhot 010021, Peoples R China.

来源:MATERIALS LETTERS,2018,Vol.210

基金:National Natural Science Foundation of China [51364025]; Major Fundamental Research Program of Inner Mongolia [20130902]; Scientific Research Program for Higher Schools of Inner Mongolia [NJZY16371]; Program for Young Talents of Science and Technology in Universities of Inner Mongolia [NJYT-17-B13]

JCR分区:PHYSICS, APPLIED为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2

中科院分区:大类工程技术2区;小类材料科学:综合3区;小类物理:应用3区

(JCR)当年影响因子:2.687

(JCR)5年影响因子:2.452

WOS被引频次:1

SCOPUS被引频次:3

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程,材料科学与工程,力学,机械工程

关键词:Solar energy materials; Intermediate band; Photovoltaic; Ti-substituted CuGaS2

摘要:In present paper, a promising intermediate band (IB) material of CuGaS2 thin films incorporating with titanium (Ti) have been successfully fabricated 更多

3. Surface modification of Cu(In,Ga)Se-2 thin films by radio frequency magnetron sputtering with a gradient power SCOPUS SCIE 期刊论文 会议论文

作者:Ren, NY;Zhu, J;Wang, YL;Ban, SL

作者全称:Ren, Ningyu;Zhu, Jun;Wang, Yanlai;Ban, Shiliang

作者机构:[Ren, Ningyu; Zhu, Jun; Wang, Yanlai; Ban, Shiliang] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Sch 更多

通讯作者地址:Zhu, J; Ban, SL (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2018,Vol.20,Issue.1-2

基金:National Natural Science Foundation of China [61464009, 51364025]; Major Fundamental Research Program of Inner Mongolia Autonomous Region [20130902]

JCR分区:PHYSICS, APPLIED为Q4;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q4;OPTICS为Q4

(JCR)当年影响因子:0.39

(JCR)5年影响因子:0.38

ESI学科:MATERIALS SCIENCE

关键词:CIGS; Film; Quaternary target; RF magnetron sputtering; Tunable power

摘要:Copper indium gallium selenide (Cu(In,Ga)Se-2, CIGS) thin films were fabricated using radio frequency magnetron sputtering from a single quaternary ce 更多

4. Optical and Electrical Properties of Copper Zinc Tin Sulfide Films As Solar Cell Absorber Materials Prepared by a Compacting Process SCOPUS SCIE 期刊论文

作者:Fan, WL;Wang, YL;Zhu, J;Ban, SL

作者全称:Fan, Wenliang;Wang, Yanlai;Zhu, Jun;Ban, S. L.

作者机构:[Fan, Wenliang; Wang, Yanlai; Zhu, Jun; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Univ Inner Mongolia Autonomous Reg, Key Lab Semicond 更多

通讯作者:Wang, Yanlai(tsting2006@163.com)

通讯作者地址:Wang, YL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Univ Inner Mongolia Autonomous Reg, Key Lab Semicond Photovolta Technol, Hohhot 010021, Peoples R China.

来源:RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A,2018,Vol.92,Issue.10

基金:National Natural Science Foundation of China [51364025, 61464009]; Major Fundamental Research Program of Inner Mongolia Autonomous Region [20130902]; Scientific Research Program for Higher Schools of Inner Mongolia Autonomous Region [NJZY16371, NJZY16379]

关键词:coating; compacting; sintering; optical band gap

摘要:The copper zinc tin sulfide (CZTS) thin films are prepared by a promising non vacuum compacting process based on ball milling and coating technique. T 更多

5. 纤锌矿ZnO/Zn1-xMgxO非对称双量子阱中电子的带间跃迁光吸收 期刊论文

作者:钱文华;班士良

作者机构:[钱文华;班士良]内蒙古大学物理科学与技术学院,呼和浩特010021,中国

来源:内蒙古大学学报:自然科学版,2018,Issue.05

关键词:ZnO/Zn1-xMgxO双量子阱;电子带间跃迁光吸收;三元混晶效应;尺寸效应;

摘要:考虑纤锌矿ZnO/Zn1-xMgxO非对称双量子阱中内建电场的作用,运用有限差分法自洽求解导带(价带)薛定谔方程和泊松方程,得到系统中电子(空穴)的能级和波函数,进一 更多

6. Intersubband optical absorption of electrons in double parabolic quantum wells of Al_xGa_(1-x)As/Al_yGa_(1-y)As 期刊论文

作者:马淑芳;屈媛;班士良;

第一作者:马淑芳;

作者机构:[马淑芳;屈媛;班士良]School of Physical Science and Technology, Inner Mongolia University

来源:Chinese Physics B,2018,Issue.02

基金:Project supported by the National Natural Science Foundation of China(Grant No.61274098)

关键词:double parabolic quantum well;;electronic intersubband optical absorption;;three energy levels

摘要:Some realizable structures of double parabolic quantum wells(DPQWs) consisting of Al_xGa_(1-x)As/Al_yGa_(1-y)As are constructed to discuss theoretical 更多

7. Intersubband optical absorption of electrons in double parabolic quantum wells of AlxGa1-xAs/AlyGa1-yAs 期刊论文

作者:马淑芳;屈媛;班士良

作者机构:[马淑芳;屈媛;班士良]School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China

来源:中国物理B:英文版,2018,Issue.02

关键词:光吸收系数;电子转移;寓言;电子状态;不对称;差别方法;有限元素;密度矩阵;

8. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature EI SCIE SCOPUS 期刊论文

作者:Ren, NY;Zhu, J;Ban, SL

作者全称:Ren, Ningyu;Zhu, Jun;Ban, Shiliang

作者机构:[Ren, Ningyu; Zhu, Jun; Ban, Shiliang] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Univ Inner Mo, Sch Phys Sci & Technol, Hohhot 010021, 更多

第一署名单位:[Ren, Ningyu; Zhu, Jun; Ban, Shiliang] Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Univ Inner Mo, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Ren, Ningyu

通讯作者:Zhu, J.(jiulye@126.com)

通讯作者地址:Zhu, J; Ban, SL (reprint author), Inner Mongolia Univ, Key Lab Semicond Photovolta Technol Univ Inner Mo, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:AIP ADVANCES,2017,Vol.7,Issue.5

基金:National Natural Science Foundation of China [61464009]; Major Fundamental Research Program of Inner Mongolia Autonomous Region [20130902]

JCR分区:PHYSICS, APPLIED为Q3;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q3;NANOSCIENCE & NANOTECHNOLOGY为Q3

中科院分区:大类物理3区;小类材料科学:综合4区;小类纳米科技4区;小类物理:应用4区

(JCR)当年影响因子:1.653

(JCR)5年影响因子:1.657

SCOPUS被引频次:3

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程

摘要:ITO/Ag/ITO (IAI) trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmit 更多

9. 缓冲层对量子阱二能级系统中电子子带间跃迁光吸收的影响 SCIE EI CSCD SCOPUS 北大核心刊 期刊论文

作者:李群;屈媛;班士良

外文作者:Li, Q;Qu, Y;Ban, SL

第一作者:李群

通讯作者:Ban, Shi-Liang(slban@imu.edu.cn)

作者机构:[李群;屈媛;班士良]内蒙古大学物理科学与技术学院,呼和浩特,010021

通讯作者地址:Ban, SL (reprint author), Inner Mongolia Univ, Dept Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:物理学报,2017,Vol.66,Issue.7

基金:National Natural Science Foundation of China [61274098, 11304142]

JCR分区:PHYSICS, MULTIDISCIPLINARY为Q4

ESI学科:PHYSICS

知网综合影响因子:0.893

知网复合影响因子:1.250

关键词:Binary energy level system of ZnO/MgxZn1-xO quantum well; Electron intersubband transition; Ternary mixed crystal; ZnO buffer layer

摘要:由于ZnO缓冲层对纤锌矿ZnO/MgxZn1-xO有限深单量子阱结构左垒的限制作用,导致阱和右垒的尺寸、Mg组分值等因素将影响系统中形成二能级.本文考虑内建电场、导带弯曲 更多

10. Effects of two-mode transverse optical phonons in bulk wurtzite AlGaN on electronic mobility in AlGaN/GaN quantum wells EI SCIE SCOPUS 期刊论文

作者:Gu, Z;Ban, SL;Jiang, DD;Qu, Y

作者全称:Gu, Z.;Ban, S. L.;Jiang, D. D.;Qu, Y.

作者机构:[Gu, Z.; Ban, S. L.; Jiang, D. D.; Qu, Y.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一署名单位:[Gu, Z.; Ban, S. L.; Jiang, D. D.; Qu, Y.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Gu, Z.

通讯作者:Qu, Y.(quyuan@imu.edu.cn)

通讯作者地址:Qu, Y (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:JOURNAL OF APPLIED PHYSICS,2017,Vol.121,Issue.3

基金:National Natural Science Foundation of China [61274098, 11304142]

JCR分区:PHYSICS, APPLIED为Q2

中科院分区:大类物理3区;小类物理:应用3区

(JCR)当年影响因子:2.176

(JCR)5年影响因子:2.163

WOS被引频次:3

SCOPUS被引频次:3

ESI学科:PHYSICS

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程

摘要:The two-mode property of bulk transverse optical (TO) phonons in ternary mixed crystals of wurtzite AlxGa1-xN has been investigated by introducing imp 更多

11. Fabrication and magnetic investigations of highly uniform CoNiGa alloy nanowires EI SCIE SCOPUS 期刊论文

作者:Li, WJ;Khan, U;Irfan, M;Javed, K;Liu, P;Ban, SL;Han, XF

作者全称:Li, Wen-Jing;Khan, U.;Irfan, Muhammad;Javed, K.;Liu, P.;Ban, S. L.;Han, X. F.

作者机构:[Li, Wen-Jing; Khan, U.; Irfan, Muhammad; Liu, P.; Han, X. F.] Univ Chinese Acad Sci, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter P 更多

第一作者:Li, Wen-Jing

通讯作者:Han, X.F.(xfhan@iphy.ac.cn)

通讯作者地址:Han, XF (reprint author), Univ Chinese Acad Sci, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.

来源:JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2017,Vol.432

基金:State Key Project of Fundamental Research; 863 Plan Project of Ministry of Science and Technology [MOST 2014AA032904]; MOST National Key Scientific Instrument and Equipment Development Projects [2011YQ120053]; National Natural Science Foundation of China [NSFC] [11374351, 11434014]; Strategic Priority Research Program (B) of the Chinese Academy of Sciences (CAS) [XDB07030200]; user fund of Wuhan National High Magnetic Field Center [PHMFF2015011]

JCR分区:PHYSICS, CONDENSED MATTER为Q2;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q2

中科院分区:大类物理3区;小类材料科学:综合3区;小类物理:凝聚态物理3区

(JCR)当年影响因子:3.046

(JCR)5年影响因子:2.717

WOS被引频次:1

SCOPUS被引频次:2

ESI学科:PHYSICS

教育部学科:物理学,电子科学与技术,光学工程

关键词:Electrodeposition; CoNiGa alloy nanowires; AAO templates; Thermal activation effect

摘要:CoNiGa ternary alloy nanowire arrays were successfully fabricated by simple DC electrodeposition into the anodized aluminum oxide (AAO) templates. A s 更多

12. Interband optical absorption in wurtzite MgxZn1-xO/ZnO/MgyZn1-yO asymmetric quantum wells EI SCIE SCOPUS 期刊论文

作者:Gu, Z;Zhu, ZN;Wang, MM;Wang, YQ;Wang, MS;Qu, Y;Ban, SL

作者全称:Gu, Z.;Zhu, Z. N.;Wang, M. M.;Wang, Y. Q.;Wang, M. S.;Qu, Y.;Ban, S. L.

作者机构:[Gu, Z.; Zhu, Z. N.; Wang, M. M.; Wang, Y. Q.; Wang, M. S.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R 更多

第一署名单位:[Gu, Z.; Zhu, Z. N.; Wang, M. M.; Wang, Y. Q.; Wang, M. S.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Gu, Z.

通讯作者:Ban, S.L.(slban@imu.edu.cn)

通讯作者地址:Ban, SL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:SUPERLATTICES AND MICROSTRUCTURES,2017,Vol.102

基金:National Natural Science Foundations of China [61274098, 11304142]; Under graduates Innovating Experimentation Project of Inner Mongolia University [201412147]

JCR分区:PHYSICS, CONDENSED MATTER为Q3

中科院分区:大类物理3区;小类物理:凝聚态物理3区

(JCR)当年影响因子:2.099

(JCR)5年影响因子:2.09

SCOPUS被引频次:3

ESI学科:PHYSICS

教育部学科:材料科学与工程,化学,化学工程与技术,电子科学与技术,电气工程

关键词:Asymmetric; ZnO/MgZnO quantum well; Electronic interband optical absorption

摘要:Based on Fermi golden rule, the optical absorption induced by interband transition of electrons and holes in wurtzite MgxZn1-xO/ZnO/MgyZn1-yO asymmetr 更多

13. Acoustic phonon modes in asymmetric AlxGa1-xN/GaN/AlyGa1-yN quantum wells EI SCIE SCOPUS 期刊论文

作者:Zan, YH;Ban, SL;Chai, YJ;Qu, Y

作者全称:Zan, Y. H.;Ban, S. L.;Chai, Y. J.;Qu, Y.

作者机构:[Zan, Y. H.; Ban, S. L.; Chai, Y. J.; Qu, Y.] Inner Mongolia Univ, Sch Phys Sci & Technol, 235 Daxue West St, Hohhot 010021, Peoples R China.

第一署名单位:[Zan, Y. H.; Ban, S. L.; Chai, Y. J.; Qu, Y.] Inner Mongolia Univ, Sch Phys Sci & Technol, 235 Daxue West St, Hohhot 010021, Peoples R China.

第一作者:Zan, Y. H.

通讯作者:Ban, S.L.(slban@imu.edu.cn)

通讯作者地址:Ban, SL (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, 235 Daxue West St, Hohhot 010021, Peoples R China.

来源:SUPERLATTICES AND MICROSTRUCTURES,2017,Vol.102

基金:National Natural Science Foundation [61274098]

JCR分区:PHYSICS, CONDENSED MATTER为Q3

中科院分区:大类物理3区;小类物理:凝聚态物理3区

(JCR)当年影响因子:2.099

(JCR)5年影响因子:2.09

SCOPUS被引频次:1

ESI学科:PHYSICS

教育部学科:材料科学与工程,化学,化学工程与技术,电子科学与技术,电气工程

关键词:Acoustic phonon; Asymmetric quantum well; AlxGa1-xN/GaN/Al1-y,GayN

摘要:Using an elastic continuum model, the dispersion relations and phonon modes of propagating, confined, half space and interface acoustic phonons in asy 更多

14. Intersubband optical absorption between multi energy levels of electrons in InGaN/GaN spherical core-shell quantum dots EI SCIE SCOPUS 期刊论文

作者:Liu, WH;Qu, Y;Ban, SL

作者全称:Liu, W. H.;Qu, Y.;Ban, S. L.

作者机构:[Liu, W. H.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, 更多

第一署名单位:[Liu, W. H.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Hohhot 010021, Peoples R China.

第一作者:Liu, W. H.

通讯作者:Qu, Y.(quyuan@imu.edu.cn)

通讯作者地址:Qu, Y (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol, Univ Inner Mongolia Autonomous Reg, Hohhot 010021, Peoples R China.

来源:SUPERLATTICES AND MICROSTRUCTURES,2017,Vol.102

基金:National Natural Science Foundations [61274098, 11304142]; National Under graduates Innovating Experimentation Project [201310126031]

JCR分区:PHYSICS, CONDENSED MATTER为Q3

中科院分区:大类物理3区;小类物理:凝聚态物理3区

(JCR)当年影响因子:2.099

(JCR)5年影响因子:2.09

WOS被引频次:2

SCOPUS被引频次:5

ESI学科:PHYSICS

教育部学科:材料科学与工程,化学,化学工程与技术,电子科学与技术,电气工程

关键词:Intersubband optical absorption; Refractive index change; CSQD; Built in electric field; Ternary mixed crystal effect; Size effect

摘要:The intersubband optical absorption between multi energy levels of electrons in InxGa1-xN/GaN spherical core-shell quantum dots (CSQDs) and ternary mi 更多

15. 三元混晶纤锌矿量子阱中电子带间跃迁及迁移率 学位论文

作者:谷卓

学位授予单位:内蒙古大学

导师:班士良

学位名称:博士

论文提交日期:2017

学位论文类别:博士学位论文

16. 高迁移率半导体材料的自旋注入 学位论文

作者:刘盼

学位授予单位:内蒙古大学

导师:班士良

学位名称:博士

论文提交日期:2017

学位论文类别:博士学位论文

17. Electron mobility limited by optical phonons in wurtzite InGaN/GaN core-shell nanowires EI SCIE SCOPUS 期刊论文

作者:Liu, WH;Qu, Y;Ban, SL

作者全称:Liu, W. H.;Qu, Y.;Ban, S. L.

作者机构:[Liu, W. H.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.;[Qu, Y.; Ban, S. L.] Key Lab Semicond Ph 更多

第一署名单位:[Liu, W. H.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Liu, W. H.

通讯作者:Qu, Y.(quyuan@imu.edu.cn)

通讯作者地址:Qu, Y (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.; Qu, Y (reprint author), Key Lab Semicond Photovolta Technol Univ Inner Mo, Hohhot 010021, Peoples R China.

来源:JOURNAL OF APPLIED PHYSICS,2017,Vol.122,Issue.11

基金:National Natural Science Foundation [61274098, 11304142]; National Undergraduates Innovating Experimentation Project [201310126031]

JCR分区:PHYSICS, APPLIED为Q2

中科院分区:大类物理3区;小类物理:应用3区

(JCR)当年影响因子:2.176

(JCR)5年影响因子:2.163

ESI学科:PHYSICS

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程

摘要:Based on the force-balance and energy-balance equations, the optical phonon-limited electron mobility in InxGa1-xN/GaN core-shell nanowires (CSNWs) is 更多

18. Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures EI SCIE SCOPUS 期刊论文

作者:Zhou, XJ;Qu, Y;Ban, SL;Wang, ZP

作者全称:Zhou, X. J.;Qu, Y.;Ban, S. L.;Wang, Z. P.

作者机构:[Zhou, X. J.; Qu, Y.; Ban, S. L.; Wang, Z. P.] Inner Mongolia Univ, Sch Phys Sci & Technol, Dept Phys, Hohhot 010021, Peoples R China.;[Zhou, X. J.] O 更多

第一作者:Zhou, X. J.

通讯作者:Wang, Z.P.(ndzpwang@imu.edu.cn)

通讯作者地址:Wang, ZP (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Dept Phys, Hohhot 010021, Peoples R China.

来源:SUPERLATTICES AND MICROSTRUCTURES,2017,Vol.112

基金:National Natural Science Foundations of China [61274098, 11304142]; Natural Science Foundation of Inner Mongolia Autonomous Region [2016MS0619]

JCR分区:PHYSICS, CONDENSED MATTER为Q3

中科院分区:大类物理3区;小类物理:凝聚态物理3区

(JCR)当年影响因子:2.099

(JCR)5年影响因子:2.09

ESI学科:PHYSICS

教育部学科:材料科学与工程,化学,化学工程与技术,电子科学与技术,电气工程

关键词:Electronic mobility; Optical phonon scattering; Al2O3/AlGaN/AlN/GaN heterostructure

摘要:Considering the built-in electric fields and the two-mode property of transverse optical phonons in AlGaN material, the electronic eigen-energies and 更多

19. Transfer matrix method solving interface optical phonons in wurtzite core-multishell nanowires of III-nitrides EI SCIE SCOPUS 期刊论文

作者:Xue, ZX;Qu, Y;Xie, H;Ban, SL

作者全称:Xue, Z. X.;Qu, Y.;Xie, H.;Ban, S. L.

作者机构:[Xue, Z. X.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.; [Xie, H.] Inner Mongolia Univ, Coll C 更多

第一署名单位:[Xue, Z. X.; Qu, Y.; Ban, S. L.] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

第一作者:Xue, Z. X.

通讯作者:Xue, ZX

通讯作者地址:Xue, ZX (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

来源:AIP ADVANCES,2016,Vol.6,Issue.12

基金:National Natural Science Foundations of China [61274098, 11304142]

JCR分区:PHYSICS, APPLIED为Q3;MATERIALS SCIENCE, MULTIDISCIPLINARY为Q3;NANOSCIENCE & NANOTECHNOLOGY为Q3

中科院分区:大类物理3区;小类材料科学:综合4区;小类纳米科技4区;小类物理:应用4区

(JCR)当年影响因子:1.653

(JCR)5年影响因子:1.657

ESI学科:MATERIALS SCIENCE

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程

摘要:Within the framework of dielectric continuum and Loudon's uniaxial crystal models, the transfer matrix method (TMM) is developed to investigate interf 更多

20. Electronic mobility limited by optical phonons in Al2O3/AlGaN/GaN double heterojunctions SCIE SCOPUS 期刊论文

作者:Zhou, XJ;Gu, Z;Ban, SL;Wang, ZP

作者全称:Zhou, X. J.;Gu, Z.;Ban, S. L.;Wang, Z. P.

作者机构:[Zhou, X. J.; Gu, Z.; Ban, S. L.; Wang, Z. P.] Inner Mongolia Univ, Sch Phys Sci & Technol, Dept Phys, Hohhot 010021, Peoples R China.; [Zhou, X. J. 更多

第一署名单位:[Zhou, X. J.; Gu, Z.; Ban, S. L.; Wang, Z. P.] Inner Mongolia Univ, Sch Phys Sci & Technol, Dept Phys, Hohhot 010021, Peoples R China.

第一作者:Zhou, X. J.

通讯作者:Wang, ZP

通讯作者地址:Wang, ZP (reprint author), Inner Mongolia Univ, Sch Phys Sci & Technol, Dept Phys, Hohhot 010021, Peoples R China.

来源:JOURNAL OF APPLIED PHYSICS,2016,Vol.120,Issue.12

基金:National Natural Science Foundation of China [61274098]; Natural Science; Foundation of Inner Mongolia [2016MS0619]

JCR分区:PHYSICS, APPLIED为Q2

中科院分区:大类物理3区;小类物理:应用3区

(JCR)当年影响因子:2.176

(JCR)5年影响因子:2.163

WOS被引频次:1

ESI学科:PHYSICS

教育部学科:光学工程,物理学,电子科学与技术,船舶与海洋工程

摘要:Applying a finite difference method and modified random-element-isodisplacement model, the mobility of electrons in the two dimensional electron gas i 更多

更新时间:Mar 28, 2019

共 12 页, 233 条记录

TOP